Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

The effect of Si doping on the strain and microstructure in GaN films grown on sapphire by metalorganic chemical vapor deposition was investigated. Strain was measured quantitatively by x-ray diffraction, Raman spectroscopy, and wafer curvature techniques. It was found that for a Si concentration of 2310 cm, the threshold for crack formation during film growth was 2.0 mm. Transmission electron ...

Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs

GaN films were grown on (100) GaAs substrates by metalorganic chemical vapor deposition and were found to be of (200) cubic or (111) cubit/(0002) hexagonal phase. Their photoluminescence characteristics remained invariant with material phase. We report assignment of band-edge photoluminescence near 3!36 eV and 3.15-3.31 eV in apparently cubic GaN to intrinsic/bound excitons and phonon-assisted,...

Time-Resolved Photoluminescence Characterization of GaN Layers Grown by Metalorganic Chemical Vapor Deposition

GaN layers with wurtzite structure were found to exhibit intense photoluminescence (PL) at 3.47eV (T = 10K) corresponding to recombination of excitons bound to neutral donors. The dependence of this luminescence on the growth conditions, layer thickness and density of excitation power was studied. New PL bands were evidenced in the UV region under high levels of excitation (Iexc 3 0.56mJ/cm ).

Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition

Electron paramagnetic resonance ~EPR! and optically detected magnetic resonance ~ODMR! experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.5310 to 5.0310 cm. The samples were also characterized by secondary-ion-mass spectroscopy ~SIMS!, temperature-dependent Hall effect, and low-temperature photoluminescence ~PL! measurements. EPR at 9 GHz on the conductive fil...

Free excitonic transitions in GaN, grown by metalorganic chemicalvapor deposition